Insulated gate bipolar transistor having a trench
US5909039A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Jan 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
An IGBT comprises a drain, a highly doped p-type substrate layer, a highly doped n-type buffer layer, a drift layer, a p-type base layer, a highly doped n-type source region layer and a source electrode. A trench is etched in the base layer and an insulating layer with a gate electrode thereon is arranged on the base layer from the source region layer to the drift layer for the creation of a conducting inversion channel there. A contact portion is provided vertically separated from the source region layer and has the source electrode applied thereon for collecting holes injected from the substrate layer to the drift layer at a vertical distance from the source region layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.