Minority carrier semiconductor devices with improved stability
US5909051A · kind A · utility
14Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Feb 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/305
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for improving the operating stability of compound semiconductor minority carrier devices and the devices created using this method are described. The method describes intentional introduction of impurities into the layers adjacent to the active region, which impurities act as a barrier to the degradation process, particularly undesired defect formation and propagation. A preferred embodiment of the present invention uses O doping of III-V optoelectronic devices during an epitaxial growth process to improve the operating reliability of the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.