Daniel A. Steigerwald
35Patents
19h-index
39Co-inventors
81Inventor score
Filing activity: Feb 18, 1997 → Jul 29, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6784463B2 | III-Phospide and III-Arsenide flip chip light-emitting devices | Electricity | 299 | Expired |
| US6547249B2 | Monolithic series/parallel led arrays formed on highly resistive substrates | Electricity | 262 | Expired |
| US6885035B2 | Multi-chip semiconductor LED assembly | Electricity | 136 | Expired |
| US7048412B2 | Axial LED source | Mechanical Engineering; Lighting; Heating | 128 | Expired |
| US6828596B2 | Contacting scheme for large and small area semiconductor light emitting flip chip devices | Electricity | 118 | Expired |
| US6730940B1 | Enhanced brightness light emitting device spot emitter | Electricity | 86 | Expired |
| US6455878B1 | Semiconductor LED flip-chip having low refractive index underfill | Electricity | 75 | Expired |
| US6891197B2 | Semiconductor LED flip-chip with dielectric coating on the mesa | Electricity | 68 | Expired |
| US6630689B2 | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa | Electricity | 65 | Expired |
| US6844571B2 | III-nitride light-emitting device with increased light generating capability | Electricity | 57 | Expired |
| US6969946B2 | Enhanced brightness light emitting device spot emitter | Electricity | 53 | Expired |
| US7095061B2 | Contacting scheme for large and small area semiconductor light emitting flip chip devices | Electricity | 40 | Expired |
| US7348212B2 | Interconnects for semiconductor light emitting devices | Electricity | 36 | Expired |
| US6946309B2 | III-Phosphide and III-Arsenide flip chip light-emitting devices | Electricity | 34 | Expired |
| US6977396B2 | High-powered light emitting device with improved thermal properties | Electricity | 28 | Expired |
| US6914272B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 28 | Expired |
| US6657300B2 | Formation of ohmic contacts in III-nitride light emitting devices | Electricity | 27 | Expired |
| US6946685B1 | Light emitting semiconductor method and device | Electricity | 25 | Expired |
| US6933535B2 | Light emitting devices with enhanced luminous efficiency | Electricity | 22 | Expired |
| US5909051A | Minority carrier semiconductor devices with improved stability | Electricity | 14 | Expired |
| US7015054B2 | Semiconductor light emitting device and method | Electricity | 13 | Expired |
| US7652304B2 | Contacting scheme for large and small area semiconductor light emitting flip chip devices | Electricity | 12 | Active |
| US7345323B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 7 | Expired |
| US6756186B2 | Producing self-aligned and self-exposed photoresist patterns on light emitting devices | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7351599B2 | High-powered light emitting device with improved thermal properties | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.