Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device
US5909625A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 9, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Jun 9, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method for forming a layer of hemispherical silicon grains having a desired density and a desired shape in order to increase the surface area of the storage electrode of a capacitor. The method involves the formation of a thin oxide film over an under silicon layer to be formed with hemispherical silicon grains, so that the formation of those hemispherical silicon grains can be carried out in such a manner that the hemispherical silicon grains have a desired density and a desired shape under given conditions irrespective of whether or not the under silicon layer is doped with impurity ions and of the crystalline structure of the under silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.