Chan Lim
34Patents
8h-index
30Co-inventors
75Inventor score
Filing activity: Dec 28, 1994 → Jul 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8173507B2 | Methods of forming integrated circuitry comprising charge storage transistors | Electricity | 63 | Active |
| US6426307B2 | Method of manufacturing an aluminum oxide film in a semiconductor device | Electricity | 40 | Expired |
| US5478769A | Process for fabricating a stashed capacitor in a semiconductor device | Electricity | 32 | Expired |
| US6403156B2 | Method of forming an A1203 film in a semiconductor device | Electricity | 23 | Expired |
| US6589886B2 | Method for manufacturing aluminum oxide film for use in a semiconductor device | Electricity | 19 | Expired |
| US6113134A | Airbag system of automotive vehicle | Performing Operations; Transporting | 17 | Expired |
| US5985730A | Method of forming a capacitor of a semiconductor device | Electricity | 17 | Expired |
| US6387749B1 | Method of manufacturing a capacitor in a semiconductor device | Electricity | 13 | Expired |
| US6465371B2 | Method for manufacturing zirconium oxide film for use in semiconductor device | Electricity | 8 | Expired |
| US6303427A | Method of manufacturing a capacitor in a semiconductor device | Electricity | 8 | Expired |
| US8058138B2 | Gap processing | Electricity | 7 | Active |
| US6344428B1 | Method of forming catalyst layer for fuel cell | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5909625A | Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6559000B2 | Method of manufacturing a capacitor in a semiconductor device | Electricity | 5 | Expired |
| US6743541B2 | Monopolar cell pack of proton exchange membrane fuel cell and direct methanol fuel cell | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6723598B2 | Method for manufacturing aluminum oxide films for use in semiconductor devices | Electricity | 4 | Expired |
| US6329237A | Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma | Electricity | 4 | Expired |
| US6355516B1 | Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8293617B2 | Gap processing | Electricity | 4 | Active |
| US6486021B2 | Method for manufacturing a semiconductor device having incorporated therein a high K capacitor dielectric | Electricity | 3 | Expired |
| US7923336B2 | High-k dielectric film, method of forming the same and related semiconductor device | Emerging Cross-Sectional Technologies | 2 | Active |
| US6417042B2 | Method of manufacturing a capacitor in a semiconductor device | Electricity | 2 | Expired |
| US6281066A | Method of manufacturing a capacitor in a memory device | Electricity | 2 | Expired |
| US7405482B2 | High-k dielectric film, method of forming the same and related semiconductor device | Emerging Cross-Sectional Technologies | 2 | Active |
| US6153481A | Method for forming an isolation insulating film for internal elements of a semiconductor device | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.