Resist composition, a process for forming a resist pattern and a process for manufacturing a semiconductor device
US5910392A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1997 |
| Grant date | Jun 8, 1999 |
| Priority date | — |
| Expiry date | Jun 26, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a chemically amplified resist composition that is able to form a resist pattern that can be exposed in short wavelength regions, has good transparency, sensitivity, dry-etch resistance and resolution, while also exhibiting excellent adhesion to the substrate. This chemically amplified resist composition comprises: the combination of a base resin comprised of a polymer that is itself insoluble in a basic aqueous solution and contains at least (A) a monomer unit I having carboxylic acid or phenol protected with a specific protective group, and (B) a monomer unit II having an ester group or ether group that contains a cyclic carbonate structure, and can become soluble in a basic aqueous solution when the protective group of the monomer unit I is deprotected by the effect of the acid; and, a photo acid generator capable of generating an acid that can provoke deprotection of the protective group of monomer unit I when decomposed by absorption of imaging radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.