Ei Yano
73Patents
14h-index
62Co-inventors
83Inventor score
Filing activity: Mar 26, 1992 → May 19, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5968713A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 95 | Expired |
| US6013416A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 93 | Expired |
| US6329125A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 78 | Expired |
| US6200725A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 54 | Expired |
| US6027856A | Negative-type resist composition and process for forming resist patterns | Physics | 40 | Expired |
| US6613834B2 | Low dielectric constant film material, film and semiconductor device using such material | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6278192A | Semiconductor device with encapsulating material composed of silica | Electricity | 24 | Expired |
| US5910392A | Resist composition, a process for forming a resist pattern and a process for manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5444811A | Organic functional optical thin film, fabrication and use thereof | Electricity | 22 | Expired |
| US6342562B1 | Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method | Electricity | 19 | Expired |
| US6887644B1 | Polymer compound for a chemical amplification resist and a fabrication process of a semiconductor device using such a chemical amplification resist | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5482174A | Method for removing copper oxide on the surface of a copper film and a method for patterning a copper film | Electricity | 17 | Expired |
| US6506534B1 | Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6780498B2 | Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant film | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6844135B2 | Chemically amplified resist material and patterning method using same | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6052261A | Method for manufacturing magnetoresistance head | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5633121A | Method for examining surface of copper layer in circuit board and process for producing circuit board | Electricity | 13 | Expired |
| US6791345B2 | Contactor for testing semiconductor device and manufacturing method thereof | Physics | 13 | Expired |
| US5906912A | Processes for forming resist pattern and for producing semiconductor device | Electricity | 11 | Expired |
| US7202679B2 | Contactor having conductive particles in a hole as a contact electrode | Electricity | 11 | Expired |
| US6656659B1 | Resist composition suitable for short wavelength exposure and resist pattern forming method | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7262142B2 | Semiconductor device fabrication method | Electricity | 10 | Expired |
| US6127098A | Method of making resist patterns | Physics | 9 | Expired |
| US6770417B2 | Negative resist composition, process for forming resist patterns, and process for manufacturing electron device | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5776659A | Ionizing radiation exposure method utilizing water soluble aniline antistatic polymer layer | Emerging Cross-Sectional Technologies | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.