Tunnel effect sensor
US5911157A · kind A · utility
3Cited by
8References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 17, 1996 |
| Grant date | Jun 8, 1999 |
| Priority date | — |
| Expiry date | Jul 17, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The tunnel effect acceleration sensor has a mass part (4) movable at springs (5) fashioned in a sensor layer (1), particularly a monocrystalline silicon layer of an SOI substrate. A tunnel electrode (6) and a cooperating electrode (7) are arranged lying opposite one another in the plane of this sensor layer (1). One of these electrodes (6,7) is attached to the mass part (4) and one is firmly connected to the substrate. Compensation electrodes (8,9) are present for the electrostatic positioning of the mass part (4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.