Method of producing semiconductor device and rinse for cleaning semiconductor device
US5911836A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1997 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Jan 9, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.