Compound semiconductor epitaxial wafer
US5912476A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1996 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Dec 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial wafer EW. The epitaxial layers include at least an nitrogen-added gallium phosphide arsenide mixed crystalline epitaxial layer having an n-type carrier concentration descending gradually toward the uppermost surface of the grown layer in a continuous or stepwise manner before p-type impurity is diffused, and contain an intermediate layer 83 with an n-type carrier concentration of 4.times.10.sup.14 /cm.sup.3 or more and less than 3.5.times.10.sup.15 /cm.sup.3, and a surface layer 84 having an n-type carrier concentration equals to or lower than that for the intermediate layer 83.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.