High efficiency light emitting diodes
US5912477A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 20, 1997 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | May 20, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Light emitting diodes are disclosed which have increased external efficiency and are formed from silicon carbide substrates. Diodes are produced by a method which includes directing a beam of laser light at one surface of a portion of silicon carbide, and which the laser light is sufficient to vaporize the silicon carbide that it strikes to thereby define a cut in the silicon carbide portion; and then dry etching the silicon carbide portion to remove by-products generated when the laser light cuts the silicon carbide portion. The resulting diode structure includes reticulate patterned sidewalls that promote increased light emission efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.