Multi-layer metal sandwich with taper and reduced etch bias and method for forming same
US5912506A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1997 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Sep 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-layer metal sandwich structure with taper and reduced etch bias formed on a substrate includes a first metal layer formed on the substrate and a second metal layer formed on the first metal layer. The width of the first metal layer is greater than the width of the second metal layer at the interface of the first metal layer and the second metal layer. The second metal layer has tapered side walls. The taper angle between each side wall and the intersection of the first and second metal layers is between 5.degree. and 90.degree.. The multi-layer metal sandwich may also include a third metal layer formed on the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.