MOS semiconductor device and method of manufacturing the same
US5912509A · kind A · utility
13Cited by
0References
5Claims
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Key dates
| Filing date | Jul 15, 1997 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Jul 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor device includes a first diffusion layer, an insulating film, and an electrode. The first diffusion layer is formed on the surface of a first-conductivity-type semiconductor substrate and has an opposite conductivity type. The insulating film is formed on the first diffusion layer. The electrode is made of a conductor layer formed on the insulating film. The width of the electrode is smaller than a value twice the length by which an impurity doped into the surface of the semiconductor substrate, using the electrode as a mask, laterally diffuses during annealing to a position immediately below the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.