Universal memory element and method of programming same
US5912839A · kind A · utility
431Cited by
1References
45Claims
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Key dates
| Filing date | Jun 23, 1998 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify said memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.