Method for flash EEPROM data writing
US5912844A · kind A · utility
22Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1998 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Jan 28, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method for writing data to a NOR-type flash memory array including loading page data to a bit-latch buffer, programming cells to low threshold voltage V.sub.t, and programming cells to high V.sub.t. Programming cells to high V.sub.t by either: Channel Hot Electron Injection (CHEI) or Source Side Injection (SSI). CHEI releases the band-to-band induced hot hole damage while SSI further reduces the sector size to be the same as page size for NOR-type flash EEPROM memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.