Patent · US Expired

Method for producing a CMOS circuit

US5913115A · kind A · utility

4Cited by

7References

7Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Markus Biebl · Augsburg, DE
Udo Schwalke · Heldenstein, DE
Herbert Schaefer · Herdorf, DE
Dirk Schumann · Lübbenau/Spreewald - Lubnjow/Błota, DE

Key dates

Filing date	Apr 29, 1998
Grant date	Jun 15, 1999
Priority date	—
Expiry date	Apr 29, 2018

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In producing a CMOS circuit, an n-channel MOS transistor and a p-channel MOS transistor are formed in a semiconductor substrate. In situ p-doped, monocrystalline silicon structures are formed by epitaxial growth selectively with respect to insulating material and with respect to n-doped silicon, such silicon structures being suitable as a diffusion source for forming source/drain regions of the p-channel MOS transistor. The source/drain regions of the n-channel MOS transistor are produced beforehand by means of implantation or diffusion. Owing to the selectivity of the epitaxy that is used, it is not necessary to cover the n-doped source/drain regions of the n-channel MOS transistor during the production of the p-channel MOS transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.