Oxidized diffusion barrier surface for the adherence of copper and method for same
US5913144A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 20, 1996 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Sep 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method has been provided for improving the adhesion of Cu to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The diffusion barrier is exposed to either a reactive oxygen species, or a plasma containing oxygen. A thin layer of the diffusion barrier is oxidized, typically less than 50 .ANG., in response to exposure to the oxygen environment. CVD copper is then deposited over the oxidized diffusion barrier surface. The oxide layer improves bonding between the copper and diffusion barrier surfaces. The oxide layer permits the control of tolerances in the diffusion barrier preparation processes, and copper precursor, to be relaxed. An integrated circuit comprising an oxide layer between the diffusion barrier and the copper layer is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.