Silicon nitride sidewall and top surface layer separating conductors
US5914279A · kind A · utility
12Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1997 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | Apr 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a conductive structure (66) is formed with a top layer of silicon nitride (62) and silicon nitride (70) sidewalls on a semiconductor substrate. The layer of silicon nitride (70) covering the sidewalls of the conductive structure (66) intersect with the layer of silicon nitride on top of the conductive structure with a relatively square shoulder. A subsequently deposited conductor makes contact with the surface of the semiconductor substrate (56) without shorting to the conductive structure (66) on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.