Ming Yang
14Patents
9h-index
14Co-inventors
65Inventor score
Filing activity: Sep 8, 1992 → Jun 27, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5393702A | Via sidewall SOG nitridation for via filling | Electricity | 39 | Expired |
| US6277720A | Silicon nitride dopant diffusion barrier in integrated circuits | Electricity | 35 | Expired |
| US5554550A | Method of fabricating electrically eraseable read only memory cell having a trench | Electricity | 32 | Expired |
| US6605540B2 | Process for forming a dual damascene structure | Electricity | 13 | Expired |
| US5763020A | Process for evenly depositing ions using a tilting and rotating platform | Chemistry; Metallurgy | 13 | Expired |
| US5512507A | Process for post metal coding of a ROM, by gate etch | Electricity | 12 | Expired |
| US5914279A | Silicon nitride sidewall and top surface layer separating conductors | Electricity | 12 | Expired |
| US5264386A | Read only memory manufacturing method | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6803273B1 | Method to salicide source-line in flash memory with STI | Electricity | 9 | Expired |
| US5759282A | Process for evenly depositing ions using a tilting and rotating platform | Chemistry; Metallurgy | 6 | Expired |
| US7112532B2 | Process for forming a dual damascene structure | Electricity | 4 | Expired |
| US5972796A | In-situ barc and nitride etch process | Electricity | 2 | Expired |
| US6930049B2 | Endpoint control for small open area by RF source parameter Vdc | Electricity | 1 | Expired |
| US6274481A | Process sequence to improve DRAM data retention | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.