Methods of making high voltage GaN-A1N based semiconductor devices
US5915164A · kind A · utility
23Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1995 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | Dec 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.