Chemical vapor deposition of W-Si-N and W-B-N
US5916634A · kind A · utility
55Cited by
8References
12Claims
0Family size
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Key dates
| Filing date | Oct 1, 1996 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Oct 1, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.