Light emitting diode with asymmetrical energy band structure
US5917201A · kind A · utility
33Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1997 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Sep 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
Abstract
A high bandgap material is used as a cladding layer to confine the carrier overflow in a aluminum-gallium-indium-phosphide light emitting diode. The quantum efficiency is improved. The use of this high bandgap material as a window material also prevents current crowding. The efficiency can further be improved by using a Distributed Bragg Reflector in the structure to reflect light, and a buffer layer to reduce interface dislocation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.