Jacob C. Tarn
7Patents
5h-index
13Co-inventors
60Inventor score
Filing activity: Sep 28, 1990 → Feb 21, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6078064A | Indium gallium nitride light emitting diode | Electricity | 153 | Expired |
| US6169294A | Inverted light emitting diode | Electricity | 150 | Expired |
| US5789768A | Light emitting diode having transparent conductive oxide formed on the contact layer | Electricity | 142 | Expired |
| US6057562A | High efficiency light emitting diode with distributed Bragg reflector | Electricity | 54 | Expired |
| US5917201A | Light emitting diode with asymmetrical energy band structure | Electricity | 33 | Expired |
| US5041883A | Light emitting diodes with nitrogen doping | Electricity | 3 | Expired |
| US10347796B2 | Light-emitting element mounting substrate and light-emitting package using the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.