MRAM cell requiring low switching field
US5917749A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1997 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | May 23, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5616
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A low switching field multi-state, multi-layer magnetic memory cell including two layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.