Process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5918116A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 9, 1997 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | May 9, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate oxides having different thicknesses are grown on a semiconductor layer by the process which comprises forming a semiconductor layer on a substrate, growing an oxide layer on the semiconductor layer, exposing a selected area of the oxide layer, amorphizing the semiconductor layer underlying the exposed oxide layer, removing the oxide layer to expose the semiconductor layer having both amorphized and non-amorphized regions and growing gate oxide on the amorphized and non-amorphized regions of the semiconductor layer. Gate oxide grown on the amorphized regions will be thicker than gate oxide grown on the non-amorphized regions. The process of the invention obviates the need for special integrated circuit manufacturing design modifications and can be utilized to fabricate a wide variety of devices, in particular, MOS-type devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.