Sailesh Chittipeddi
64Patents
19h-index
35Co-inventors
84Inventor score
Filing activity: Jun 26, 1990 → Apr 25, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5918116A | Process for forming gate oxides possessing different thicknesses on a semiconductor substrate | Emerging Cross-Sectional Technologies | 214 | Expired |
| US6790757B1 | Wire bonding method for copper interconnects in semiconductor devices | Electricity | 109 | Expired |
| US5751065A | Integrated circuit with active devices under bond pads | Electricity | 105 | Expired |
| US5573965A | Method of fabricating semiconductor devices and integrated circuits using sidewall spacer technology | Electricity | 80 | Expired |
| US5972179A | Silicon IC contacts using composite TiN barrier layer | Electricity | 70 | Expired |
| US5986343A | Bond pad design for integrated circuits | Electricity | 61 | Expired |
| US5147820A | Silicide formation on polysilicon | Electricity | 51 | Expired |
| US6773994B2 | CMOS vertical replacement gate (VRG) transistors | Electricity | 49 | Expired |
| US5965903A | Device and method of manufacture for an integrated circuit having a BIST circuit and bond pads incorporated therein | Electricity | 40 | Expired |
| US6417087B1 | Process for forming a dual damascene bond pad structure over active circuitry | Electricity | 39 | Expired |
| US5891784A | Transistor fabrication method | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6838769B1 | Dual damascene bond pad structure for lowering stress and allowing circuitry under pads | Electricity | 30 | Expired |
| US6017787A | Integrated circuit with twin tub | Electricity | 28 | Expired |
| US6191017A | Method of forming a multi-layered dual-polysilicon structure | Electricity | 26 | Expired |
| US6265890A | In-line non-contact depletion capacitance measurement method and apparatus | Physics | 24 | Expired |
| US6207547A | Bond pad design for integrated circuits | Electricity | 24 | Expired |
| US6246325A | Distributed communications system for reducing equipment down-time | Electricity | 22 | Expired |
| US5045486A | Transistor fabrication method | Electricity | 20 | Expired |
| US6472304B2 | Wire bonding to copper | Electricity | 20 | Expired |
| US6087732A | Bond pad for a flip-chip package | Electricity | 19 | Expired |
| US6503793B1 | Method for concurrently forming an ESD protection device and a shallow trench isolation region | Electricity | 14 | Expired |
| US7952206B2 | Solder bump structure for flip chip semiconductor devices and method of manufacture therefore | Electricity | 14 | Active |
| US6384452B1 | Electrostatic discharge protection device with monolithically formed resistor-capacitor portion | Electricity | 12 | Expired |
| US6556409B1 | Integrated circuit including ESD circuits for a multi-chip module and a method therefor | Electricity | 12 | Expired |
| US6187658A | Bond pad for a flip chip package, and method of forming the same | Electricity | 12 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.