SOI substrate and method of producing the same
US5918136A · kind A · utility
24Cited by
7References
2Claims
0Family size
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Key dates
| Filing date | Aug 19, 1997 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Aug 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.