Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same
US5918151A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1996 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Jun 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26533
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an SOI semiconductor substrate and a manufacturing apparatus therefor in which a mean implantation depth and a dose of each of a series of oxygen ion implantations are continuously or stepwise changed, a depthwise distribution of an oxygen atom concentration has a single peak and uniform in a plane at a predetermined depth, a maximum oxygen atom concentration is preferably no larger than 2.25.times.10.sup.22 atoms/cm.sup.3 and no smaller than 1.0.times.10.sup.22 atoms/cm.sup.3, a total oxygen dose is equal to a desired thickness of a buried oxide film multiplied by 4.48.times.10.sup.22 (in ions/cm.sup.3), and preferably a thermal process at a temperature of 1300.degree. C. or higher is applied after the completion of the oxygen ion implantation to form the buried oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.