Low defect density vacancy dominated silicon
US5919302A · kind A · utility
72Cited by
9References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1998 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | Apr 9, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetric region comprises the central axis or has a width of at least about 15 mm, and a process for the preparation thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.