Apparatus for fabricating semiconductor device and method for fabricating semiconductor device
US5919336A · kind A · utility
6Cited by
17References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1997 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | Nov 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.