Magnetic random access memory having stacked memory cells and fabrication method therefor
US5920500A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1996 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | Aug 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (10) has a plurality of stacked memory cells on semiconductor substrate (11), each cell basically having a portion of magnetic material (12), a word line (13), and sense line (14). Upper sense line (22) is electrically coupled to lower sense line (12) via conductor line (23) with ohmic contacts. In order to read and store states in the memory cell, lower and upper word lines (13, 18) are activated, thereby total magnetic field is applied to portion of magnetic material (11). This stacked memory structure allows magnetic random access memory (10) to integrate more memory cells on semiconductor substrate (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.