Read-only memory cell arrangement and method for its production

US5920778A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Wolfgang Rosner · Hersbruck, DE
• Wolfgang Krautschneider · Ottobrunn, DE
• Franz Hofmann · Munich, DE
• Lothar Risch · Neubiberg, DE

Key dates

• Filing date: Sep 23, 1997
• Grant date: Jul 6, 1999
• Expiry date: Sep 23, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B20/00

Abstract

In a read-only memory cell arrangement having first memory cells which contain a vertical MOS transistor, and having second memory cells which do not contain vertical MOS transistors, the memory cells are arranged along opposite flanks of strip-shaped parallel insulation trenches (16). The width of the insulation trenches (16) is preferably equal to their separation, so that the memory cell arrangement can be produced with a space requirement of 2F.sup.2 per memory cell, F being the minimum structure size in the respective technology.