Process for obtaining a lift-off imaging profile
US5922503A · kind A · utility
15Cited by
2References
15Claims
0Family size
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Key dates
| Filing date | Feb 18, 1997 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Feb 18, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for obtaining a lift-off imaging profile which comprises the steps of: PA1 a) providing a first layer of plasma etchable material wherein said material has a film thickness less than about 0.5 .mu.m (micrometer); PA1 b) providing a second layer comprising a photoimageable material on top of the first layer; PA1 c) forming a pattern in said second layer which comprises the steps of selectively exposing and developing the second layer; PA1 d) reacting the second layer with an organosilicon material; and PA1 e) etching the first layer isotropically in an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.