Hydrogen fluoride vapor phase selective etching method for fabricating semiconductor devices
US5922623A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1996 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | May 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method selective of vapor phase etching for fabricating a semiconductor device having a refractory metal silicide electrode abutting a silicon oxide film on the surface or a semiconductor device having an AlGaAs layer, an electrode formed on the AlGaAs layer and a silicon oxide film on the surface of the semiconductor device. The method comprises a step of removing a portion of the silicon oxide film by a gas including a vapor of hydrogen fluoride. The method further uses a mixture of nitrogen gas including vapor of anhydrous hydrofluoric acid and a nitrogen gas including a vapor of H.sub.2 O, wherein the ratio of the nitrogen gas including the vaporized anhydrous hydrofluoric acid to the nitrogen gas including vapor of H.sub.2 O is less than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.