Field controlled semiconductor device of SiC and a method for production thereof

US5923051A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Christopher Harris · Sollentuna, SE
• Mietek Bakowski · Gately Drive, SE
• Ulf Gustafsson · Linköping, SE
• Mats Andersson · Mullsjö, SE

Key dates

• Filing date: Oct 17, 1997
• Grant date: Jul 13, 1999
• Expiry date: Oct 17, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A field controlled semiconductor device of SiC comprises superimposed in the order mentioned at least a drain (12), a highly doped substrate layer (1) and a low doped n-type drift layer (2). It has also a highly doped n-type source region layer (6) and a source (11) connected thereto. A doped channel region layer (4) connects the source region layer to the drift layer, and a current is intended to flow therethrough when the device is in an on-state. The device has also a gate electrode (9). The channel region layer has a substantially lateral extension and is formed by a low doped n-type layer (4). The gate electrode (9) is arranged to influence the channel region layer from above for giving a conducting channel (17) created therein from the source region layer to the drift layer a substantially lateral extension.