Semiconductor device with metallic protective film
US5923072A · kind A · utility
26Cited by
16References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1997 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Oct 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a metal pattern composed of a material reacting on water and a metal protective film formed between an intrusion path of water and the metal pattern on the surface of a part of the metal pattern. The metal pattern is composed of a refractory metal, a refractory metal compound or aluminum, and the metal protective film is formed of any of gold, platinum, palladium, gold alloy, platinum alloy, palladium alloy and lanthanum hexaboron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.