Patent · US Expired

Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication

US5923696A · kind A · utility

3Cited by

6References

24Claims

0Family size

Assignee

Motorola, Inc. · US

Inventors

Jamal Ramdani · Gilbert, US
Michael S. Lebby · Apache Junction, US
Philip Kiely · Gilbert, US

Key dates

Filing date	Dec 27, 1996
Grant date	Jul 13, 1999
Priority date	—
Expiry date	Dec 27, 2016

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/34326
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A stack of distributed Bragg reflectors is disposed on the surface of a semiconductor substrate. The stack includes a plurality of alternating layers of material having alternating refractive indexes with the stack having a first dopant type. A first cladding region is disposed on the stack with an active area disposed on the first cladding region. The active area includes at least two barrier layers and a quantum well layer. A second cladding region is disposed on the active area with a stack of distributed Bragg reflectors disposed on the cladding region. A contact region is disposed on the second stack of distributed Bragg reflectors. The contact region includes a magnesium doped gallium phosphide material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.