Method for simultaneously fabricating salicide and self-aligned barrier
US5924010A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1996 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Oct 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating salicide and self-aligned barrier simultaneously is disclosed. The initial steps include sputtering a metal stack (Ti--TiN--Ti) and forming a salicide layer by thermally reacting the metal stack and the wafer followed by a chemical etching which removes the unreacted portions of the metal stack. The portions of the metal stack on Si can react with Si to form a TiSi.sub.2 layer, thus forming TiSi.sub.2 --TiN--TiSi.sub.2. The TiSi.sub.2 layer over the TiN layer acts as a mask in the chemical etching and protects the TiN layer from been etched. The diffusion barrier layer is thus formed simultaneously within the fabricating of salicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.