Lithographic surface or thin layer modification
US5925259A · kind A · utility
102Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1996 |
| Grant date | Jul 20, 1999 |
| Priority date | — |
| Expiry date | Aug 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/768
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for producing lithographic features in a substrate layer is is described, comprising the steps of lowering a stamp (15) carrying an reactant (14) onto a substrate (10), confining the subsequent reaction to the desired pattern, lifting said stamp and removing the debris of the reaction from the substrate. Preferably, the stamp carries the pattern to be etched or depressions corresponding to such a pattern. Using the described methods, patterns with submicron features can be generated. The method allows a general solution to parallel handling and transfer of materials in a variety of technical fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.