Patent · US Expired

MOS circuit configuration for switching high voltages on a semiconductor chip

US5925905A · kind A · utility

6Cited by

3References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Armin Hanneberg · Haar, DE
Georg Tempel · Zorneding, DE

Key dates

Filing date	Jul 24, 1997
Grant date	Jul 20, 1999
Priority date	—
Expiry date	Jul 24, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH03K17/693
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

The MOS circuit configuration allows switching high voltages on a semiconductor chip. In order to switch a high negative voltage, for example as a programming voltage on the word line of a flash-memory, two circuit variants are given which are formed only with transistors of the same conductivity type as the substrate. The substrate and the transistors formed in the well are p-conductive. In this way it is possible to dispense with deep insulating wells which require special technology.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.