Inventor · Zorneding, DE

Georg Tempel

51Patents
9h-index
27Co-inventors
78Inventor score

Filing activity: Apr 24, 1996 → Jan 7, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US5943255A Read only memory Electricity 52 Expired
US5828092A Semiconductor memory device and method for its production Electricity 37 Expired
US7190022B2 One transistor flash memory cell Electricity 25 Expired
US6628544B2 Flash memory cell and method to achieve multiple bits per cell Physics 21 Expired
US5970338A Method of producing an EEPROM semiconductor structure Electricity 17 Expired
US6909139B2 One transistor flash memory cell Electricity 15 Expired
US6083765A Method for producing semiconductor memory device having a capacitor Electricity 12 Expired
US6025626A Nonvolatile memory cell Electricity 11 Expired
US7361924B2 Non-volatile memory element and production method thereof and storage memory arrangement Physics 10 Expired
US6531359B1 Method for fabricating a memory cell array Electricity 9 Expired
US8247861B2 Semiconductor device and method of making same Electricity 8 Active
US8691660B2 Semiconductor component with trench isolation and corresponding production method Electricity 7 Active
US6787843B2 Nonvolatile semiconductor memory cell and associated semiconductor circuit configuration and method for the fabrication of the circuit configuration Electricity 7 Expired
US5869860A Ferroelectric memory device and method for producing the device Electricity 7 Expired
US9263154B2 Method and device for evaluating a chip manufacturing process Physics 6 Active
US5925905A MOS circuit configuration for switching high voltages on a semiconductor chip Electricity 6 Expired
US6232169A Method for producing a capacitor Electricity 5 Expired
US7138333B2 Process for sealing plasma-damaged, porous low-k materials Electricity 5 Expired
US7262456B2 Bit line structure and production method thereof Electricity 5 Expired
US7291881B2 Bit line structure and method of fabrication Electricity 5 Active
US7060558B2 Method for fabricating a field-effect transistor having a floating gate Electricity 4 Expired
US7687842B2 Bit line structure and method for the production thereof Electricity 3 Active
US5883832A Electrically erasable and programmable non-volatile storage location Electricity 3 Expired
US7018898B2 Non-volatile two transistor semiconductor memory cell and method for producing the same Physics 3 Expired
US7399673B2 Method of forming a charge-trapping memory device Electricity 3 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.