Circuit for converting internal voltage of semiconductor device
US5929696A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Oct 17, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F1/465
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An internal voltage conversion circuit for a DRAM wherein a voltage level of an internal power supply is regulated by an external signal applied to the DRAM pins after packaging to perform reliability tests. The internal voltage conversion circuit includes a test mode signal generator, for generating a test mode signal by combining first control signals applied externally of the semiconductor device, and a switching signal generator, for generating first and second switching signals according to second control signals applied externally of the DRAM when the test mode signal is active. First and second switching resistor portions connected in series between the internal power supply port and a ground potential are switched by the first and second switching signals, respectively, so that their resistance values are changed. The resistor portions are in a feedback path connected to one input of a comparator. The other input is connected to a reference cell. The internal voltage supply varies responsive to changes in resistance values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.