Jong-Hyoung Lim
35Patents
7h-index
32Co-inventors
69Inventor score
Filing activity: Oct 17, 1997 → Dec 30, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6617885B2 | Sense amplifiers having gain control circuits therein that inhibit signal oscillations | Physics | 25 | Expired |
| US5929696A | Circuit for converting internal voltage of semiconductor device | Physics | 22 | Expired |
| US6937534B2 | Integrated circuit memory device including delay locked loop circuit and delay locked loop control circuit and method of controlling delay locked loop circuit | Physics | 12 | Expired |
| US6111457A | Internal power supply circuit for use in a semiconductor device | Physics | 11 | Expired |
| US7184340B2 | Circuit and method for test mode entry of a semiconductor memory device | Physics | 10 | Expired |
| US6081460A | Integrated circuit devices having voltage level responsive mode-selection circuits therein and methods of operating same | Physics | 10 | Expired |
| US7397715B2 | Semiconductor memory device for testing redundancy cells | Physics | 9 | Active |
| US6696860B2 | Variable voltage data buffers | Electricity | 7 | Expired |
| US6483373B1 | Input circuit having signature circuits in parallel in semiconductor device | Physics | 6 | Expired |
| US8619484B2 | Semiconductor device, method of adjusting load capacitance for the same, and semiconductor system including the same | Physics | 6 | Active |
| US7612573B2 | Probe sensing pads and methods of detecting positions of probe needles relative to probe sensing pads | Electricity | 6 | Active |
| US6140704A | Integrated circuit memory devices with improved twisted bit-line structures | Electricity | 6 | Expired |
| US8144539B2 | Semiconductor memory device for self refresh and memory system having the same | Physics | 5 | Active |
| US9159398B2 | Memory core and semiconductor memory device including the same | Physics | 4 | Active |
| US6028797A | Multi-bank integrated circuit memory devices having cross-coupled isolation and precharge circuits therein | Physics | 4 | Expired |
| US6822490B2 | Data output circuit for reducing skew of data signal | Electricity | 4 | Expired |
| US8228736B2 | Mobile system on chip (SoC) and mobile terminal using the mobile SoC, and method for refreshing a memory in the mobile SoC | Physics | 4 | Active |
| US7639547B2 | Semiconductor memory device for independently controlling internal supply voltages and method of using the same | Physics | 3 | Active |
| US7054204B2 | Semiconductor device and method for controlling the same | Physics | 3 | Expired |
| US7646665B2 | Semiconductor memory device and burn-in test method thereof | Physics | 3 | Active |
| US6087887A | Signal routing circuits having selective high impedance and low impedance output states | Electricity | 3 | Expired |
| US7675316B2 | Semiconductor memory device including on die termination circuit and on die termination method thereof | Physics | 3 | Active |
| US7656741B2 | Row active time control circuit and a semiconductor memory device having the same | Physics | 2 | Active |
| US6084808A | Circuits and methods for burn-in of integrated circuits using potential differences between adjacent main word lines | Physics | 2 | Expired |
| US8987867B2 | Wafer and method of manufacturing the same | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.