Method for fabricating a stacked, or crown shaped, capacitor structure
US5930625A · kind A · utility
29Cited by
15References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 24, 1998 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Apr 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
A method for creating a stacked, or crown shaped, capacitor structure, with increased surface area, obtained using a storage node electrode, comprised of HSG silicon grains on the surface of the storage node electrode, has been developed. An in situ procedure, allows HSG silicon seeds to be selectively formed, only on the exposed surfaces of a amorphous silicon storage node electrode shape, in an LPCVD system, directly after an HF preclean step. A subsequent anneal, again performed in situ, in the LPCVD system, results in the formation of HSG silicon grains, converted from the HSG silicon seeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.