Method of making a low parasitic resistor on ultrathin silicon on insulator
US5930638A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Aug 19, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A diffused resistor and a method for making the diffused resistor are disclosed. The diffused resistor is formed in a substantially pure portion of the thin semiconductor layer that is formed on an insulating substrate. The thin semiconductor layer has low a number of defects and mid-band gap states. This portion may be located in an electrically isolated region of the thin semiconductor layer. A resistive region is used to provide the resistance of the diff-used resistor. Contact regions are provided continguous with the the resistive region. The diff-used resistor can be formed by themselves or in conjunction with other circuit elements, such as a MOSFET, for example. Accordingly, also disclosed is a method for making the diffused resitor in conjunction with a MOSFET. The diffused resistor and the MOSFET are formed in electrically isolated semiconductor islands. The electrically isolated semiconductor islands are formed from the high quality thin semiconductor layer. Both non-silicide and silicide processes are disclosed. Also disclosed is a differential amplifier circuit that uses the disclosed diffused resistor embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.