Inventor · San Diego, CA, US

Ronald E. Reedy

62Patents
22h-index
47Co-inventors
88Inventor score

Filing activity: Oct 3, 1983 → Nov 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US5600169A Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer Electricity 141 Expired
US6910812B2 Small-scale optoelectronic package Electricity 131 Expired
US5416043A Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer Electricity 128 Expired
US5596205A High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Emerging Cross-Sectional Technologies 121 Expired
US5973363A CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator Electricity 116 Expired
US5930638A Method of making a low parasitic resistor on ultrathin silicon on insulator Emerging Cross-Sectional Technologies 107 Expired
US6057555A High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Emerging Cross-Sectional Technologies 105 Expired
US5663570A High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Emerging Cross-Sectional Technologies 104 Expired
US5973382A Capacitor on ultrathin semiconductor on insulator Electricity 102 Expired
US5492857A High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Emerging Cross-Sectional Technologies 96 Expired
US5572040A High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Emerging Cross-Sectional Technologies 93 Expired
US5883396A High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Emerging Cross-Sectional Technologies 92 Expired
US5861336A High-frequency wireless communication system on a single ultrathin silicon on sapphire chip Emerging Cross-Sectional Technologies 91 Expired
US5895957A Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer Electricity 82 Expired
US5027171A Dual polarity floating gate MOS analog memory device Electricity 81 Expired
US9197194B2 Methods and apparatuses for use in tuning reactance in a circuit device Electricity 67 Active
US6583445B1 Integrated electronic-optoelectronic devices and method of making the same Electricity 58 Expired
US5688715A Excimer laser dopant activation of backside illuminated CCD's Emerging Cross-Sectional Technologies 42 Expired
US6090648A Method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire Electricity 35 Expired
US6667506B1 Variable capacitor with programmability Electricity 33 Expired
US4696536A Integrated optical wavelength demultiplexer Physics 31 Expired
US4843448A Thin-film integrated injection logic Electricity 28 Expired
US9806694B2 Methods and apparatuses for use in tuning reactance in a circuit device Electricity 21 Active
US9484897B2 Level shifter Electricity 21 Active
US4718063A Optoelectronic integrated circuit multiplex Electricity 21 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.