Defect induced buried oxide (DIBOX) for throughput SOI
US5930643A · kind A · utility
52Cited by
5References
34Claims
0Family size
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Key dates
| Filing date | Dec 22, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Dec 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing a first low energy implantation step to create a stable defect region; a second low energy implantation step to create an amorphous layer adjacent to the stable defect region; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising said semiconductor substrate having said DIBOX is also provided herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.