Method for filling substrate recesses using pressure and heat treatment
US5932289A · kind A · utility
36Cited by
15References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Apr 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2457
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.