Method of laser ablation of semiconductor structures
US5932485A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 21, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Oct 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a process for exposing a metal-containing surface feature on an integrated circuit wafer by laser ablation. According to the invention, a silicon dioxide passivation layer is provided upon the surface feature. The silicon dioxide layer is transparent to electromagnetic radiation having a specified wavelength, such that the electromagnetic radiation is directed through the silicon dioxide layer onto the underlying surface feature. A portion of the surface feature is ablated. Ablation of the surface feature causes removal of an overlying portion of the silicon dioxide layer, thereby exposing the surface feature. Laser ablation may further be performed on optional overlying layers of silicon nitride and polyimide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.