Method to minimize watermarks on silicon substrates
US5932493A · kind A · utility
24Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Sep 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Formation of watermarks during semiconductor processing can be prevented by rinsing silicon wafers in an organic solvent prior to drying. Water droplets on the silicon wafer surface are taken up by the solvent and film is formed over the wafer surface. Following this rinse, the wafer may be subjected to standard IPA-based drying techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.